NTMS7N03R2
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Notes 5 and 7)
V (BR)DSS
Vdc
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 30 Vdc, V GS = 0 Vdc)
(V DS = 30 Vdc, V GS = 0 Vdc, T J = 125 ° C)
I DSS
30
?
?
?
?
41
0.02
?
?
?
1.0
10
mV/ ° C
m Adc
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
I GSS
?
?
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (Note 5)
V GS(th)
Vdc
(V DS = V GS , I D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain?to?Source On?Resistance (Notes 5 and 7)
(V GS = 10 Vdc, I D = 7.0 Adc)
(V GS = 4.5 Vdc, I D = 3.5 Adc)
R DS(on)
1.0
?
?
?
1.6
4.0
18.6
23.5
3.0
?
23
28
mV/ ° C
m W
Drain?to?Source On?Voltage (V GS = 10 Vdc, I D = 5.0 Adc) (Notes 5 and 7)
Forward Transconductance (V DS = 15 Vdc, I D = 2.0 Adc) (Note 5)
V DS(on)
g FS
?
3.0
93
13
115
?
mV
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
1064
1190
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
300
94
490
120
SWITCHING CHARACTERISTICS (Note 6)
Turn?On Delay Time
t d(on)
?
15
30
ns
Rise Time
Turn?Off Delay Time
Fall Time
Turn?On Delay Time
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 10 Vdc, I D = 5.0 Adc,
V GS = 4.5 Vdc,
R G = 9.1 W ) (Note 5)
(V DD = 10 Vdc, I D = 5.0 Adc,
V GS = 10 Vdc,
R G = 9.1 W ) (Note 5)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
71
27
38
8.0
38
33
49
185
70
80
?
?
?
Gate Charge
(V DS = 16 Vdc, I D = 5.0 Adc,
V GS = 10 Vdc) (Note 5)
Q T
Q 1
Q 2
Q 3
?
?
?
?
26
3.1
6.0
5.5
43
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage (Note 5)
(I S = 7.0 Adc, V GS = 0 Vdc) (Note 5)
V SD
?
0.82
1.1
Vdc
(I S = 7.0 Adc, V GS = 0 Vdc,
T J = 125 ° C)
?
0.67
?
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 7.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 5)
t rr
t a
t b
Q RR
?
?
?
?
27
15
11.5
0.02
?
?
?
?
ns
m C
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperature.
7. Reflects Typical Values.
Cpk +
Max limit * Typ
3 S
http://onsemi.com
3
相关PDF资料
NTMSD2P102LR2G MOSFET P-CH 20V 2.3A 8-SOIC
NTMSD3P102R2G MOSFET P-CH 20V 2.34A 8-SOIC
NTMSD3P303R2G MOSFET P-CH 30V 2.34A 8-SOIC
NTMSD6N303R2G MOSFET N-CH 30V 6A 8-SOIC
NTNUS3171PZT5G MOSFET P-CH 20V 200MA SOT-1123
NTP125N02RG MOSFET N-CH 24V 15.9A TO220AB
NTP18N06G MOSFET N-CH 60V 15A TO220AB
NTP18N06LG MOSFET N-CH 60V 15A TO220AB
相关代理商/技术参数
NTMS7N03R2_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 7 Amps, 30 Volts
NTMS7N03R2G 功能描述:MOSFET 30V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMSD2P102LR2 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMSD2P102LR2/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:FETKY?
NTMSD2P102LR2_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NTMSD2P102LR2
NTMSD2P102LR2G 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTMSD2P102R2 功能描述:MOSFET P-CH 20V 2.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NTMSD2P102R2SG 功能描述:MOSFET FETKY 20V.150R LL TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube